MT28F128J3FS-11ET Micron, MT28F128J3FS-11ET Datasheet - Page 41

• Manufacturer Part Number: MT28F128J3FS-11ET
• Description: 32Mb Q-flash memory
• Manufacturer: Micron

RECOMMENDED DC ELECTRICAL CHARACTERISTICS (continued)
Commercial Temperature (0ºC ≤ T
NOTE: 1. All currents are in RMS unless otherwise noted. These currents are valid for all product versions (packages and speeds).
128Mb, 64Mb, 32Mb Q-Flash Memory
MT28F640J3_7.p65 – Rev. 6, Pub. 8/02
DESCRIPTION
V
Lock Bits Current
V
Block Lock Bits Current
V
Block Erase Suspend
Current
V
Program, Erase, and
Lock Bit Operations
V
Program, or Lock Bit
Operations
V
CC
CC
CC
PEN
PEN
CC
Program or Set
Block Erase or Clear
Program Suspend or
Lockout Voltage
during Block Erase,
Lockout during
2. Includes STS.
3. CMOS inputs are either V
4. Sampled, not 100% tested.
5. I
6. Block erase, programming, and lock bit configurations are inhibited when V
7. Typically, V
8. Block erase, programming, and lock bit configurations are inhibited when V
the device’s current draw is I
the range between V
the range between V
CCWS
and I
CCES
PEN
are specified with the device deselected. If the device is read or written while in erase suspend mode,
is connected to V
LKO
PENLK
(MIN) and V
CC
(MAX) and V
CMOS inputs, V
CMOS inputs, V
±0.2V or V
A
CCR
TTL inputs, V
TTL inputs, V
≤ +85ºC), Extended Temperature (-40ºC ≤ T
Device is disabled
CC
or I
CONDITIONS
.
CCW
CC
(MIN), or above V
SS
PENH
.
±0.2V. TTL inputs are either V
(MIN), or above V
PEN
PEN
PEN
PEN
= V
= V
= V
= V
CC
CC
41
CC
CC
CC
(MAX).
PENH
SYMBOL
V
V
(MAX).
V
I
I
I
PENLK
PENH
CC
CC
CC
LKO
5
6
7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
IL
or V
CC
PEN
IH
< V
TYP
.
2.7
2.2
128Mb, 64Mb, 32Mb
22
24
20
22
≤ V
LKO
A
PENLK
≤ +85ºC)
Q-FLASH MEMORY
, and they are not guaranteed in
, and they are not guaranteed in
MAX
3.6
60
70
70
80
10
1
UNITS NOTES
mA
mA
mA
mA
mA
©2002, Micron Technology, Inc.
V
V
V
5, 6, 7
1, 4
1, 4
6, 7
1
8