BF1100R Philips Semiconductors, BF1100R Datasheet - Page 12

• Manufacturer Part Number: BF1100R
• Description: Dual-gate MOS-FETs
• Manufacturer: Philips Semiconductors

Philips Semiconductors
Table 1 Scattering parameters: V
Table 2 Noise data: V
Table 3 Scattering parameters: V
Table 4 Noise data: V
1995 Apr 25
(MHz)
(MHz)
1000
1000
Dual-gate MOS-FETs
100
200
300
400
500
600
700
800
900
100
200
300
400
500
600
700
800
900
f
f
50
50
(MHz)
(MHz)
MAGNITUDE
MAGNITUDE
800
800
f
f
(ratio)
(ratio)
0.986
0.983
0.974
0.960
0.953
0.933
0.915
0.895
0.880
0.864
0.839
0.986
0.984
0.974
0.960
0.953
0.933
0.915
0.894
0.879
0.863
0.838
s
s
11
11
DS
DS
= 9 V; V
= 12 V; V
ANGLE
ANGLE
(deg)
(deg)
14.7
21.8
28.7
35.4
42.0
47.9
53.5
59.6
65.0
14.6
21.8
28.7
35.3
41.9
47.8
53.5
59.5
65.0
3.6
7.4
3.7
7.4
G2-S
DS
DS
G2-S
F
(dB)
2.00
F
(dB)
2.00
= 9 V; V
MAGNITUDE
= 12 V; V
MAGNITUDE
min
min
= 4 V; I
= 4 V; I
(ratio)
(ratio)
2.528
2.531
2.490
2.446
2.412
2.341
2.283
2.205
2.146
2.087
1.998
2.478
2.480
2.440
2.400
2.371
2.306
2.255
2.183
2.131
2.080
1.999
G2-S
D
G2-S
D
= 10 mA
s
s
= 10 mA
21
21
= 4 V; I
= 4 V; I
ANGLE
ANGLE
174.4
169.8
159.5
149.8
139.8
130.1
120.4
102.9
174.7
170.3
160.6
151.4
141.9
132.7
123.6
107.2
(deg)
(deg)
115.3
111.6
93.4
84.4
98.2
89.7
D
12
D
(ratio)
(ratio)
= 10 mA
0.67
0.66
= 10 mA
MAGNITUDE
MAGNITUDE
(ratio)
(ratio)
0.001
0.001
0.002
0.002
0.003
0.003
0.004
0.003
0.003
0.003
0.003
0.001
0.001
0.002
0.002
0.003
0.003
0.004
0.004
0.003
0.003
0.003
opt
opt
s
s
12
12
(deg)
(deg)
43.9
43.3
ANGLE
ANGLE
106.6
135.4
(deg)
(deg)
115.8
63.7
80.7
81.0
80.3
76.3
76.5
79.0
81.5
90.8
72.2
80.9
82.7
79.9
77.7
77.1
77.1
79.3
83.9
95.1
BF1100; BF1100R
MAGNITUDE
MAGNITUDE
(ratio)
(ratio)
1.000
1.000
0.996
0.994
0.992
0.987
0.984
0.981
0.978
0.974
0.971
1.000
1.000
0.997
0.996
0.994
0.991
0.989
0.986
0.984
0.982
0.980
Product specification
0.89
0.97
s
s
r
r
22
22
n
n
ANGLE
ANGLE
(deg)
(deg)
15.7
19.4
23.0
26.7
30.3
33.9
37.6
12.8
15.8
18.7
21.7
24.6
27.5
30.4
11.9
2.0
4.2
8.1
1.6
3.5
6.6
9.7