BF1100R Philips Semiconductors, BF1100R Datasheet - Page 3

• Manufacturer Part Number: BF1100R
• Description: Dual-gate MOS-FETs
• Manufacturer: Philips Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board.
1995 Apr 25
handbook, halfpage
V
I
I
I
P
T
T
D
G1
G2
stg
j
(mW)
DS
tot
Dual-gate MOS-FETs
P tot
SYMBOL
250
200
150
100
50
0
0
Fig.3 Power derating curves.
BF1100R
50
drain-source voltage
drain current
gate 1 current
gate 2 current
total power dissipation
storage temperature
operating junction temperature
BF1100
BF1100R
100
BF1100
PARAMETER
150
T
amb
MLD155
( C)
o
200
see Fig.3
up to T
up to T
3
CONDITIONS
amb
amb
Fig.4
= 50 C; note 1
= 40 C; note 1
(mS)
Y fs
40
30
20
10
0
50
Forward transfer admittance as a function
of junction temperature; typical values.
0
65
MIN.
BF1100; BF1100R
50
14
30
200
200
+150
+150
10
10
Product specification
MAX.
100
T ( C)
j
MLD156
o
V
mA
mA
mA
mW
mW
C
C
150
UNIT