MT29F16G08FAAWC Micron, MT29F16G08FAAWC Datasheet - Page 18

• Manufacturer Part Number: MT29F16G08FAAWC
• Description: NAND Flash Memory; Density: 16Gb; Organization: 2Gbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 3.3V; Operating Temperature Range: 0° to +70°C; Package: 48-TSOP
• Manufacturer: Micron

Figure 10:
Figure 11:
Table 5:
PDF: 09005aef81b80e13/Source: 09005aef81b80eac
4gb_nand_m40a__2.fm - Rev. B 2/07 EN
CLE
H
H
X
X
X
X
X
L
L
L
L
Mode Selection
I
TC vs. Rp
OL
ALE
H
H
X
X
X
X
X
L
L
L
L
vs. Rp
Notes:
CE#
I
T
1. WP# should be biased to CMOS HIGH or LOW for standby.
2. Mode selection settings for this table: H = Logic level HIGH; L = Logic level LOW;
X
X
X
X
H
L
L
L
L
L
L
3.50ma
3.00ma
2.50ma
2.00ma
1.50ma
1.00ma
0.50ma
0.00ma
1.20µs
1.00µs
800ns
600ns
400ns
200ns
X = V
0ns
0
0
IH
WE#
or V
H
H
X
X
X
X
2,000
2kΩ
IL
.
4,000
4kΩ
RE#
H
H
H
H
H
H
X
X
X
X
6,000
6kΩ
Rp
Rp
18
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
0V/Vcc
8,000
8kΩ
WP#
H
H
H
H
H
X
X
X
X
L
I
OL
at 3.60V (MAX)
I
1
10,000
OL
RC = TC
C = 100pF
10kΩ
at 3.60V (MAX)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Mode
Read mode
Write mode
Data input
Sequential read and data output
During read (busy)
During program (busy)
During erase (busy)
Write protect
Standby
12,000
12kΩ
©2006 Micron Technology, Inc. All rights reserved.
Command input
Address input
Command input
Address input
Bus Operation