MT29F16G08FAAWC Micron, MT29F16G08FAAWC Datasheet - Page 54

• Manufacturer Part Number: MT29F16G08FAAWC
• Description: NAND Flash Memory; Density: 16Gb; Organization: 2Gbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 3.3V; Operating Temperature Range: 0° to +70°C; Package: 48-TSOP
• Manufacturer: Micron

Interleaved BLOCK ERASE Operations
Figure 43:
Figure 44:
Interleaved TWO-PLANE BLOCK ERASE Operations
PDF: 09005aef81b80e13/Source: 09005aef81b80eac
4gb_nand_m40a__2.fm - Rev. B 2/07 EN
I/Ox
R/B#
(die 1 internal)
R/B#
(die 2 internal)
R/B#
(external)
I/Ox
R/B#
(die 1 internal)
R/B#
(die 2 internal)
R/B#
(external)
60h
60h
Address
Interleaved BLOCK ERASE Operation with R/B# Monitoring
Interleaved BLOCK ERASE Operation with Status Register Monitoring
Address
Die 1
Die 1
D0h
D0h
Figures 43 and 44 show how to perform two types of interleaved BLOCK ERASE opera-
tions. In Figure 43, the R/B# signal is monitored for operation completion. In Figure 44,
the TWO-PLANE/MULTIPLE-DIE READ STATUS (78h) command is used to monitor the
status register for operation completion.
Figures 45 and 46 on page 55 show how to perform two types of interleaved BLOCK
ERASE operations. In Figure 45, the R/B# signal is monitored for operation completion.
In Figure 46, the TWO-PLANE/MULTIPLE-DIE READ STATUS (78h) command is used
to monitor the status register for operation completion.
The interleaved TWO-PLANE BLOCK ERASE operation must meet two-plane addressing
requirements. See “Two-Plane Addressing” on page 35 for details.
60h
60h
Address
Address
Die 2
Die 2
D0h
D0h
54
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
78h
Address Status
Die 1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
60h
Address
Die 1
60h
D0h
Address
Command Definitions
Die 1
©2006 Micron Technology, Inc. All rights reserved.
D0h
60h
Address
Die 2
D0h