BLF0810S-90 Philips Semiconductors, BLF0810S-90 Datasheet - Page 2

• Manufacturer Part Number: BLF0810S-90
• Description: Base station LDMOS transistors
• Manufacturer: Philips Semiconductors

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Philips Semiconductors
FEATURES
PINNING - SOT502A
QUICK REFERENCE DATA
Typical RF performance at T
2003 Jun 12
handbook, halfpage
Class-AB (2-tone)
CDMA (IS95)
MODE OF OPERATION
Typical CDMA IS95 performance at standard settings
with a supply voltage of 27 V and I
Adjacent channel bandwidth is 30 kHz, adjacent
channel at
– Output power = 15 W (AV)
– Gain = 16 dB
– Efficiency = 27%
– ACPR = 46 dBc at 750 kHz and BW = 30 kHz
70 W CW performance
Easy power control
Excellent ruggedness
High power gain
Excellent thermal stability
Designed for broadband operation (800 to 1000 MHz)
Internally matched for ease of use.
Base station LDMOS transistors
Fig.1 Simplified outline SOT502A (BLF0810-90).
PIN
1
2
3
750 kHz:
Top view
drain
gate
source; connected to flange
f
h
1
1
2
= 25 C in a common source test circuit.
= 890.0; f
DESCRIPTION
(MHz)
890
DQ
MBK394
f
3
2
of 560 mA.
= 890.1
V
(V)
27
27
DS
2
APPLICATIONS
DESCRIPTION
90 W LDMOS power transistor for base station
applications at frequencies from 800 to 1000 MHz.
PINNING - SOT502B
70 (PEP)
RF power amplifier for GSM, EDGE and CDMA base
stations and multicarrier operations in the
800 to 1000 MHz frequency range.
15 (AV)
Fig.2 Simplified outline SOT502B (BLF0810S-90)
(W)
P
L
PIN
1
2
3
BLF0810-90; BLF0810S-90
(dB)
G
16
16
p
drain
gate
source; connected to flange
Top view
(%)
39
27
D
DESCRIPTION
1
2
MBL105
Product specification
3
(dBc)
d
28
3
ACPR 750
(dBc)
46