BLF0810S-90 Philips Semiconductors, BLF0810S-90 Datasheet - Page 4

• Manufacturer Part Number: BLF0810S-90
• Description: Base station LDMOS transistors
• Manufacturer: Philips Semiconductors

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Philips Semiconductors
APPLICATION INFORMATION
RF performance in a common source class-AB circuit.
V
2003 Jun 12
Mode of operation: 2-tone CW, 100 kHz spacing
G
IRL
d
G
d
Mode of operation: CDMA, IS95 (pilot, paging, sync and traffic codes 8 to 13)
G
ACPR 750
handbook, halfpage
DS
3
3
SYMBOL
D
D
D
Base station LDMOS transistors
p
p
p
V
Fig.3
= 27 V; I
DS
(dB)
G p
= 27 V; I
20
16
12
8
4
0
0
Power gain and efficiency as functions of
peak envelope power, typical values.
DQ
DQ
gain power
drain efficiency
input return loss
third order intermodulation
distortion
gain power
drain efficiency
third order intermodulation
distortion
ruggedness
gain power
drain efficiency
adjacent channel power ratio
= 560 mA; f
= 560 mA; f = 890 MHz; T
20
1
40
PARAMETER
= 890.0 MHz; f
G p
D
60
2
= 890.1 MHz.
P L (PEP) (W)
80
h
= 25 C; unless otherwise specified.
MDB170
100
50
40
30
20
10
0
(%)
P
P
VSWR = 10 : 1 through all
phases; P
P
P
at BW = 30 kHz
D
L
L
L
L
= 45 W (PEP)
= 63 W (PEP)
= 15 W (AV)
= 15 W (AV)
4
CONDITIONS
handbook, halfpage
L
= 125 W (PEP)
V
Fig.4
(dBc)
DS
d 3
= 27 V; f
20
40
60
80
0
0
Third order intermodulation distortion as a
function of peak envelope power, typical
values.
I DQ = 400 mA
1
BLF0810-90; BLF0810S-90
= 890.0 MHz; f
20
450 mA
40
15
29
33
no degradation in output power
2
MIN.
= 890.1 MHz.
500 mA
600 mA
60
16.5
32
16.5
38
16
27
TYP.
10
40
32
46
Product specification
P L (PEP) (W)
80
MAX.
6
27
MDB171
100
dB
%
dB
dBc
dB
%
dBc
dB
%
dBc
UNIT