BLF2022-40 Philips Semiconductors, BLF2022-40 Datasheet - Page 2

• Manufacturer Part Number: BLF2022-40
• Description: UHF power LDMOS transistor
• Manufacturer: Philips Semiconductors

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Philips Semiconductors
FEATURES
• High power gain
• Easy power control
• Excellent ruggedness
• Designed for broadband operation (2.0 to 2.2 GHz)
• Internal input and output matching for high gain and
• Improved linearity at backoff levels.
APPLICATIONS
• Common source class-AB operation for PCN and PCS
• Suitable for GSM, Edge, CDMA and WCDMA
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistors encapsulated in a 2-lead SOT608A flange
package with a ceramic cap. The common source is
connected to the mounting flange.
QUICK REFERENCE DATA
RF performance at T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
2001 April 05
Two-tone, class-AB
V
V
I
T
T
MODE OF OPERATION
D
stg
j
efficiency
applications in the 2000 to 2200 MHz frequency range
applications.
DS
GS
UHF power LDMOS transistor
SYMBOL
h
= 25 °C in a common source test circuit.
f
drain-source voltage
gate-source voltage
DC drain current
storage temperature
junction temperature
1
= 2170; f
(MHz)
2
= 2170.1
f
PARAMETER
2
V
(V)
28
PINNING
DS
PIN
1
2
3
40 (PEP)
(W)
Fig.1 Simplified outline SOT608A.
P
L
Top view
drain
gate
source, connected to flange
−
−
−
−65
−
>10.5
(dB)
MIN.
G
p
1
2
DESCRIPTION
Preliminary specification
65
±15
5
+150
200
MBL290
3
MAX.
BLF2022-40
>30
(%)
η
D
V
V
A
°C
°C
(dBc)
UNIT
≤−25
d
im