BLF2022-40 Philips Semiconductors, BLF2022-40 Datasheet - Page 3

• Manufacturer Part Number: BLF2022-40
• Description: UHF power LDMOS transistor
• Manufacturer: Philips Semiconductors

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Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Determined under specified RF operating conditions.
CHARACTERISTICS
T
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
Ruggedness in class-AB operation
The BLF2022-40 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: V
2001 April 05
R
V
V
I
I
I
g
R
C
Two-tone, class-AB
MODE OF OPERATION
j
DSS
DSX
GSS
fs
SYMBOL
SYMBOL
= 25 °C unless otherwise specified.
(BR)DSS
GSth
th j-h
DSon
rss
UHF power LDMOS transistor
thermal resistance from junction to
heatsink
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
on-state drain current
gate leakage current
forward transconductance
drain-source on-state resistance
feedback capacitance
PARAMETER
PARAMETER
DS
f
1
= 28 V; I
= 2170; f
(MHz)
DQ
f
2
= 2170.1
= 340 mA; P
T
V
V
V
V
V
V
V
V
h
GS
DS
GS
GS
GS
DS
GS
GS
L
= 25 °C, P
V
= 40 W; f = 2170 MHz.
(V)
28
h
DS
= 10 V; I
= 10 V; I
= 0; I
= 0; V
= V
= ±15 V; V
= V
= 0; V
= 25 °C; R
3
GS th
GS th
CONDITIONS
CONDITIONS
D
DS
DS
= 0.8 mA
D
D
+ 9 V; V
+ 9 V; I
tot
= 26 V
= 26 V; f = 1 MHz
(mA)
340
I
= 80 mA
= 2.9 A
DS
DQ
= 152 W, note 1
th j-h
= 0
D
= 1.15 K/W, unless otherwise specified.
DS
= 2.9 A
40 (PEP)
= 10 V
(W)
P
L
65
−
−
11
−
−
−
−
MIN.
>10.5
(dB)
G
VALUE
p
2.3
−
5
−
−
−
2.3
0.26
1.7
Preliminary specification
TYP.
BLF2022-40
>30
(%)
η
D
−
−
6
−
14
−
−
−
MAX.
UNIT
K/W
(dBc)
≤−25
V
V
µA
A
nA
S
Ω
pF
d
UNIT
im