BLF545 Philips Semiconductors, BLF545 Datasheet - Page 3

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BLF545

Manufacturer Part Number
BLF545
Description
UHF push-pull power MOS transistor
Manufacturer
Philips Semiconductors
Datasheet

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Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Per transistor section unless otherwise specified.
THERMAL RESISTANCE
October 1992
handbook, halfpage
V
I
P
T
T
R
R
D
V
stg
j
SYMBOL
DS
tot
th j-mb
th mb-h
UHF push-pull power MOS transistor
(1) Current in this area may be limited by R
(2) T
Total device; both sections equally loaded.
GS
SYMBOL
(A)
10
I D
10
mb
1
2
1
= 25 C.
drain-source voltage
gate-source voltage
DC drain current
total power dissipation
storage temperature
junction temperature
(1)
Fig.2 DC SOAR.
thermal resistance from junction to
mounting base
thermal resistance from mounting
base to heatsink
10
PARAMETER
(2)
PARAMETER
DS(on)
V DS (V)
.
MRA995
10
2
3
up to T
both sections equally loaded
total device; both sections equally
loaded
total device; both sections equally
loaded
handbook, halfpage
(1) Short-time operation during mismatch.
(2) Continuous operation.
Total device; both sections equally loaded.
P tot
(W)
mb
120
Fig.3 Power/temperature derating curves.
80
40
CONDITIONS
0
= 25 C; total device;
0
CONDITIONS
40
80
(1)
(2)
MIN.
65
Product specification
120
RESISTANCE
65
20
3.5
92
150
200
T h ( C)
MAX.
THERMAL
0.25 K/W
BLF545
1.9 K/W
MBK463
160
V
V
A
W
C
C
UNIT

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