BLF545 Philips Semiconductors, BLF545 Datasheet - Page 4

• Manufacturer Part Number: BLF545
• Description: UHF push-pull power MOS transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
CHARACTERISTICS (per section)
T
October 1992
V
I
I
V
g
R
I
C
C
C
handbook, halfpage
j
DSS
GSS
DSX
fs
(BR)DSS
GS(th)
= 25 C unless otherwise specified.
DS(on)
is
os
rs
UHF push-pull power MOS transistor
SYMBOL
V
Fig.4
(mV/K)
DS
T.C
= 10 V.
4
2
0
2
4
10
Temperature coefficient of gate-source
voltage as a function of drain current,
typical values per section.
2
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
10
1
PARAMETER
1
I D (A)
MDA504
10
V
V
I
I
I
V
V
V
V
D
D
D
V
GS
GS
GS
GS
GS
GS
= 1.2 A; V
= 1.2 A; V
GS
= 40 mA; V
= 0; I
= 0; V
= 0; V
= 0; V
= 0; V
= 15 V; V
= 20 V; V
4
handbook, halfpage
D
CONDITIONS
DS
DS
DS
DS
= 10 mA
V
Fig.5
DS
GS
DS
= 28 V
= 28 V; f = 1 MHz
= 28 V; f = 1 MHz
= 28 V; f = 1 MHz
DS
DS
(A)
DS
I D
= 10 V; T
= 10 V
= 10 V
6
4
2
0
= 10 V
= 10 V
0
= 0
Drain current as a function of gate-source
voltage, typical values per section.
j
= 25 C.
5
10
65
1
600
MIN.
900
0.85
4.8
32
24
6.4
TYP. MAX. UNIT
Product specification
15
V GS (V)
BLF545
1
1
4
1.25
MDA505
20
V
mA
V
mS
A
pF
pF
pF
A