BLF6G20-180P Philips Semiconductors, BLF6G20-180P Datasheet

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BLF6G20-180P

Manufacturer Part Number
BLF6G20-180P
Description
UHF power LDMOS transistor
Manufacturer
Philips Semiconductors
Datasheet

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1. Product profile
CAUTION
1.1 General description
1.2 Features
1.3 Applications
180 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1:
RF performance at T
[1]
I
I
I
I
I
I
I
I
I
Mode of operation
2-carrier W-CDMA
BLF6G20-180P
UHF power LDMOS transistor
Rev. 01 — 19 April 2006
Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a
supply voltage of 32 V and an I
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1800 MHz to 2000 MHz)
Internally matched for ease of use
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
1800 MHz to 2000 MHz frequency range.
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz
N
N
N
N
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Average output power = 50 W
Power gain = 17.5 dB (typ)
Efficiency = 27.5 %
ACPR = 35 dBc
Typical performance
case
= 25 C in a common source class-AB production test circuit.
f
(MHz)
1805 to 1880
Dq
of 1600 mA:
V
(V)
32
DS
P
(W)
50
L(AV)
Objective data sheet
G
(dB)
17.5
p
(%)
27.5
D
ACPR
(dBc)
35
[1]

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BLF6G20-180P Summary of contents

Page 1

... BLF6G20-180P UHF power LDMOS transistor Rev. 01 — 19 April 2006 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: RF performance at T Mode of operation 2-carrier W-CDMA [1] CAUTION 1.2 Features ...

Page 2

... LDMOST ceramic package; 2 mounting holes; 4 leads Limiting values Parameter Conditions drain-source voltage gate-source voltage drain current storage temperature junction temperature Rev. 01 — 19 April 2006 BLF6G20-180P UHF power LDMOS transistor Simplified outline Symbol <tbd> [1] Version SOT539A ...

Page 3

... RF performance at V class-AB production test circuit Symbol P L(AV ACPR 7.1 Ruggedness in class-AB operation The BLF6G20-180P is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions BLF6G20-180P_1 Objective data sheet Thermal characteristics Parameter thermal resistance from junction to case ...

Page 4

... REFERENCES JEDEC EIAJ Rev. 01 — 19 April 2006 BLF6G20-180P UHF power LDMOS transistor ...

Page 5

... Laterally Diffused Metal Oxide Semiconductor Peak-to-Average power Ratio transmission Power of the Dedicated Physical CHannel Radio Frequency Voltage Standing Wave Ratio Wideband Code Division Multiple Access Rev. 01 — 19 April 2006 BLF6G20-180P UHF power LDMOS transistor © Koninklijke Philips Electronics N.V. 2006. All rights reserved ...

Page 6

... Revision history Table 9: Revision history Document ID BLF6G20-180P_1 BLF6G20-180P_1 Objective data sheet Release date Data sheet status 20060419 Objective data sheet Rev. 01 — 19 April 2006 BLF6G20-180P UHF power LDMOS transistor Change notice Supersedes - - © Koninklijke Philips Electronics N.V. 2006. All rights reserved ...

Page 7

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Rev. 01 — 19 April 2006 BLF6G20-180P UHF power LDMOS transistor © Koninklijke Philips Electronics N.V. 2006. All rights reserved ...

Page 8

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Koninklijke Philips Electronics N.V. 2006. For more information, please visit: http://www.semiconductors.philips.com. For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com. Document identifier: BLF6G20-180P_1 All rights reserved. Date of release: 19 April 2006 ...

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