BLF6G20-180P Philips Semiconductors, BLF6G20-180P Datasheet - Page 3

• Manufacturer Part Number: BLF6G20-180P
• Description: UHF power LDMOS transistor
• Manufacturer: Philips Semiconductors

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Philips Semiconductors
5. Thermal characteristics
6. Characteristics
7. Application information
BLF6G20-180P_1
Objective data sheet
7.1 Ruggedness in class-AB operation
Table 5:
Table 6:
T
Table 7:
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1 to 64 PDPCH; f
RF performance at V
class-AB production test circuit
The BLF6G20-180P is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
I
Symbol
R
Symbol Parameter
V
V
V
I
I
I
g
R
C
Symbol
P
G
ACPR
Dq
DSS
DSX
GSS
j
fs
D
th(j-case)
(BR)DSS
GS(th)
GSq
DS(on)
rs
L(AV)
p
= 25 C per section; unless otherwise specified
= 1600 mA; P
drain-source breakdown
voltage
gate-source threshold voltage
gate-source quiescent voltage V
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
Parameter
average output power
power gain
drain efficiency
adjacent channel power ratio
Thermal characteristics
Characteristics
Application information
Parameter
thermal resistance from junction
to case
L
= 180 W (CW); f = 1880 MHz.
DS
= 32 V; I
Rev. 01 — 19 April 2006
1
= 1802.5 MHz; f
Dq
= 1600 mA; T
Conditions
V
V
V
V
V
V
V
V
I
V
f = 1 MHz
D
2
GS
DS
DS
GS
GS
DS
GS
DS
GS
GS
= 5 A
= 1807.5 MHz; f
= 10 V; I
= 28 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 8.5 V; V
= V
= 0 V; V
case
Conditions
T
P
Conditions
P
P
P
case
L(AV)
GS(th)
GS(th)
L(AV)
L(AV)
L(AV)
= 25 C; unless otherwise specified; in a
D
= 80 C;
DS
DS
= 50 W
D
D
D
= 50 W
= 50 W
= 50 W
= 0.5 mA
+ 3.75 V;
+ 3.75 V;
DS
= 144 mA
= 950 mA
= 7.2 A
= 28 V
= 28 V;
= 0 V
3
= 1872.5 MHz; f
BLF6G20-180P
UHF power LDMOS transistor
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Min
65
<tbd> 1.6
<tbd> 2
-
-
-
-
-
-
Min
-
<tbd> 17.5 -
<tbd> 27.5 -
-
DS
Typ
0.45
= 28 V;
Typ
-
-
26
-
13
0.1
<tbd> -
Typ
50
4
35
= 1877.5 MHz;
Max
-
<tbd> dBc
Max
-
<tbd> V
<tbd> V
5
-
450
-
<tbd>
Unit
K/W
Unit
W
dB
%
Unit
V
A
nA
S
pF
3 of 8
A