3SK296 Hitachi Semiconductor, 3SK296 Datasheet - Page 2

• Manufacturer Part Number: 3SK296
• Description: Silicon N-Channel Dual Gate MOS FET
• Manufacturer: Hitachi Semiconductor

3SK296
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate 1 to source voltage
Gate 2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Attention: This device is very sensitive to electro static discharge.
Electrical Characteristics (Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate 1 to source breakdown
voltage
Gate 2 to source breakdown
voltage
Gate 1 cutoff current
Gate 2 cutoff current
Drain current
Gate 1 to source cutoff voltage V
Gate 2 to source cutoff voltage V
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
Note: Marking is “ZQ–”
2
It is recommended to adopt appropriate cautions when handling this transistor.
Symbol
V
V
V
I
I
I
|y
Ciss
Coss
Crss
PG
NF
G1SS
G2SS
DS(on)
(BR)DSX
(BR)G1SS
(BR) G2SS
G1S(off)
G2S(off)
fs
|
Min
12
—
—
0.5
–0.5
0
16
1.2
0.6
—
16
—
8
8
Symbol
V
V
V
I
Pch
Tch
Tstg
Typ
—
—
—
—
—
—
—
—
20.8
1.5
0.9
0.01
19.5
2.0
D
DS
G1S
G2S
Max
—
—
—
10
+0.5
+1.0
—
2.2
1.2
0.03
—
3
100
100
Unit
V
V
V
nA
nA
mA
V
V
mS
pF
pF
pF
dB
dB
Ratings
12
25
100
150
–55 to +150
8
8
Test conditions
I
V
I
I
V
V
V
V
V
I
V
I
V
I
V
I
V
I
D
G1
G2
D
D
D
D
D
G2S
G1S
G2S
DS
G2S
DS
DS
DS
DS
DS
= 200 A , V
= 100 A
= 100 A
= 10 mA, f = 1 kHz
= 10 mA, f = 1 MHz
= 10 mA, f = 900 MHz
= 10 A, V
= 10 A, V
= 6 V, V
= 10 V, V
= 10 V, V
= 6 V, V
= 6 V, V
= 4 V, V
= 6 V, V
= 6 V, V
= –3 V
= 3 V
G1S
G2S
G2S
G2S
Unit
V
V
V
mA
mW
G2S
G1S
C
C
G2S
G1S
G1S
= 0.5V,
= 3V,
= 3V,
= 3V,
G2S
G1S
= 3V,
= 3V,
= V
= V
= –3 V,
= V
= V
DS
DS
DS
DS
= 0
= 0
= 0
= 0