3SK300 Hitachi Semiconductor, 3SK300 Datasheet - Page 3

• Manufacturer Part Number: 3SK300
• Description: Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier
• Manufacturer: Hitachi Semiconductor

Electrical Characteristics (Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate 1 to source breakdown
voltage
Gate 2 to source breakdown
voltage
Gate 1 cutoff current
Gate 2 cutoff current
Drain current
Gate 1 to source cutoff voltage V
Gate 2 to source cutoff voltage V
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
Power gain
Noise figure
Noise figure
Note: Marking is “ZR–”
Symbol
V
V
V
I
I
I
|y
Ciss
Coss
Crss
PG
NF
PG
NF
NF
G1SS
G2SS
DS(op)
(BR)DSX
(BR)G1SS
(BR)G2SS
G1S(off)
G2S(off)
fs
|
Min
14
—
—
4
0
0
20
2.4
0.8
—
24
—
12
—
—
8
8
Typ
—
—
—
—
—
8
+0.2
+0.3
25
3.1
1.1
0.021
27.6
1.0
15.6
3.0
2.7
Max
—
—
—
14
+1.0
+1.0
—
3.5
1.4
0.04
—
1.5
—
4.0
3.5
100
100
Unit
V
V
V
nA
nA
mA
V
V
ms
pF
pF
pF
dB
dB
dB
dB
dB
Test conditions
I
V
I
V
I
V
V
V
V
V
V
V
V
I
V
I
V
I
V
V
f = 1 MHz
V
I
V
I
V
I
D
G1
G2
D
D
D
D
D
D
G2S
DS
DS
G1S
DS
G2S
DS
DS
G2S
DS
DS
DS
DS
G2S
DS
DS
DS
= 200 A, V
= 100 A
= 100 A
= 10 mA, f = 1 kHz
= 10 mA, f = 200 MHz
= 10 mA, f = 900 MHz
= 10 mA, f = 60 MHz
= 10 A,
= 10 A,
= V
= V
= V
= V
= 6 V, V
= 10 V, V
= 10 V, V
= 6 V, V
= 6 V,
= 6 V, V
= 6 V, V
= 6 V, V
= –3 V
= 6 V,
= 6 V,
= 3 V
= 3 V, I
G2S
G1S
G2S
G1S
= 0
= 0
= 0
= 0
D
G1S
G2S
G2S
G2S
G2S
G2S
G1S
= 10 mA
G1S
= 0.75 V,
= 3 V,
= 3 V,
= 3 V,
= 3 V,
= 3 V,
= 3 V,
= –3 V,
3SK300
3