3SK300 Hitachi Semiconductor, 3SK300 Datasheet - Page 4

• Manufacturer Part Number: 3SK300
• Description: Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier
• Manufacturer: Hitachi Semiconductor

3SK300
Main Characteristics
4
200
150
100
50
20
16
12
8
4
0
0
Drain Current vs. Gate1 to Source Voltage
3.0 V
Gate1 to source voltage V
Ambient Temperature Ta (
Maximum Channel Power
1
50
Dissipation Curve
2.0 V
2.5 V
2
V
100
1.0 V
G2S
1.5 V
= 0.5 V
3
V
Pulse test
150
DS
G1S
4
= 6 V
C
(V)
)
200
5
20
16
12
20
16
12
8
4
0
Drain Current vs. Gate2 to Source Voltage
8
4
0
1.2 V
3.0 V
2.5 V
Gate2 to source voltage V
Drain to source voltage V
Typical Output Characteristics
1
2
2
V
4
1.5 V
V
G1S
G1S
2.0 V
1.0 V
0.8 V
0.6 V
1.0 V
= 0.5 V
= 0.4 V
3
6
V
Pulse test
DS
V
Pulse test
G2S
G2S
= 6 V
4
DS
8
(V)
(V)
= 3 V
5
10