3SK309 Hitachi Semiconductor, 3SK309 Datasheet - Page 5

• Manufacturer Part Number: 3SK309
• Description: GaAs N Channel Dual Gate MES FET UHF RF Amplifier
• Manufacturer: Hitachi Semiconductor

25
20
15
10
25
20
15
10
5
0
5
0
–1
Gate2 to Source Voltage V
Drain to Source Voltage V
–0.8
1
Drain to Source Voltage
Gate2 to Source Voltage
Power Gain vs.
2
Power Gain vs.
–0.6
3
–0.4
V
for I
at V
V
f = 900 MHz
V
f = 900 MHz
G1S
DS
I
4
D
G2S
D
G2S
= 3 mA
= 3 V
is fixed
= 5 mA
–0.2
DS
G2S
5 mA
= 0
= 0
5
(V)
(V)
6
0
50
40
30
20
10
2.0
1.6
1.2
0.8
0.4
–1.5
0
0
Gate2 to Source Voltage V
Drain to Source Voltage V
–1.0
1
Gate2 to Source Voltage
Drain to Source Voltage
Gain Reduction vs.
Noise Figure vs.
2
–0.5
3
V
for I
at V
V
f = 900 MHz
0
G1S
DS
V
f = 900 MHz
I
4
D
D
G2S
G2S
= 3 V
is fixed
= 5 mA
= 5 mA
G2S
0.5
DS
3 mA
= 0
= 0
3SK309
5
(V)
(V)
1.0
6
5