3SK309 Hitachi Semiconductor, 3SK309 Datasheet - Page 6

• Manufacturer Part Number: 3SK309
• Description: GaAs N Channel Dual Gate MES FET UHF RF Amplifier
• Manufacturer: Hitachi Semiconductor

3SK309
6
0
–.2
.2
180
–150
Test Condtion:
150
–.4
.4
S11 Parameter vs. Frequency
Test Condtion:
100 to 2000 MHz (100 MHz step)
.2
S12 Parameter vs. Frequency
–.6
.6
100 to 2000 MHz (100 MHz step)
–120
120
.4
–.8
.8
.6 .8 1
V
I
D
DS
–1
= 5 mA , Z
1
V
I
D
= 3 V , V
DS
–90
= 5 mA , Z
90
1.5
= 3 V , V
–1.5
2
1.5
o
G2S
= 50
Scale: 0.01 / div.
3 4 5
o
G2S
–60
–2
= 0 V
2
60
= 50
= 0 V
3
10
–3
4
–4
5
–5
10
–10
–30
30
0
180
0
–.2
.2
–150
150
Test Condtion:
–.4
.4
Test Condtion:
S22 Parameter vs. Frequency
100 to 2000 MHz (100 MHz step)
S21 Parameter vs. Frequency
.2
100 to 2000 MHz (100 MHz step)
–120
–.6
120
.6
.4
–.8
.8
.6 .8 1
V
I
D
DS
V
I
–1
= 5 mA , Z
D
DS
1
–90
= 5 mA , Z
= 3 V , V
90
= 3 V , V
1.5
–1.5
2
1.5
o
Scale: 1 / div.
G2S
= 50
o
3 4 5
G2S
–60
60
= 50
= 0 V
–2
2
= 0 V
3
10
–3
4
–4
5
–5
–30
30
10
–10
0