2SA1123 Panasonic Semiconductor, 2SA1123 Datasheet
2SA1123
Manufacturer Part Number
2SA1123
Description
Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SA1123.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SA1123
Manufacturer:
MATSUS
Quantity:
2 436
Company:
Part Number:
2SA1123-R
Manufacturer:
PANASONIC
Quantity:
3 450
Transistor
2SA1123
Silicon PNP epitaxial planer type
For low-frequency high breakdown voltage amplification
Complementary to 2SC2631
*
h
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Noise voltage
FE
Features
Satisfactory foward current transfer ratio h
characteristics.
High collector to emitter voltage V
Small collector output capacitance C
Makes up a complementary pair with 2SC2631, which is opti-
mum for the pre-driver stage of a 20 to 40W output amplifier.
Absolute Maximum Ratings
Electrical Characteristics
Rank
Rank classification
h
FE
Parameter
Parameter
130 ~ 220
R
185 ~ 330
Symbol
V
V
V
I
I
P
T
T
CP
C
S
C
j
stg
CBO
CEO
EBO
I
V
V
h
V
f
C
NV
CBO
T
FE
(Ta=25˚C)
Symbol
CEO
EBO
CE(sat)
ob
*
CEO
(Ta=25˚C)
260 ~ 450
ob
–55 ~ +150
.
.
Ratings
T
–150
–150
–100
–50
750
150
–5
FE
V
I
I
V
I
V
V
V
R
collector current I
C
E
C
CB
g
CB
CE
CB
CE
= –0.1mA, I
= –10 A, I
= –30mA, I
= 100k , Function = FLAT
= –10V, I
= –5V, I
= –10V, I
= –100V, I
= –10V, I
Unit
mW
mA
mA
Conditions
C
˚C
˚C
V
V
V
C
E
C
B
E
= –10mA
B
= 10mA, f = 200MHz
= 0
E
= 0, f = 1MHz
= –1mA, G
= –3mA
= 0
= 0
C
V
= 80dB
1.27
0.45
–150
min
130
–5
2.54 0.15
5.0 0.2
1
+0.2
–0.1
2
3
200
150
1.27
typ
0.45
+0.2
–0.1
max
450
300
–1
–1
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
5
4.0 0.2
Unit: mm
MHz
Unit
mV
pF
V
V
V
A
1
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2SA1123 Summary of contents
Page 1
... Transistor 2SA1123 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Features Satisfactory foward current transfer ratio h characteristics. High collector to emitter voltage V Small collector output capacitance C Makes up a complementary pair with 2SC2631, which is opti- mum for the pre-driver stage 40W output amplifier. ...
Page 2
... V =–5V CE 500 400 Ta=75˚C 300 25˚C –25˚C 200 100 0 – 0.1 – 0.3 –1 –3 –10 –30 –100 ( mA ) Collector current I C 2SA1123 I — –120 V =–5V CE 25˚C –100 Ta=75˚C –25˚C –80 –60 –40 – – 0.4 – 0.8 –1.2 –1.6 – ...