2SA1123 Panasonic Semiconductor, 2SA1123 Datasheet - Page 2

• Manufacturer Part Number: 2SA1123
• Description: Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)
• Manufacturer: Panasonic Semiconductor

Transistor
2
–100
– 0.3
– 0.1
– 0.03
– 0.01
–30
–10
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
–3
–1
– 0.1
0
6
5
4
3
2
1
0
Collector to base voltage V
–1
0
Ambient temperature Ta ( ˚C )
Collector current I
20
– 0.3
–3
40
V
C
–1
CE(sat)
P
60
ob
C
25˚C
— V
— Ta
–10
–3
80
— I
100
–25˚C
Ta=75˚C
CB
–10
C
C
–30
120
( mA )
I
f=1MHz
Ta=25˚C
E
–30
I
C
=0
CB
140
/I
B
=10
–100
–100
( V )
160
–80
–70
–60
–50
–40
–30
–20
–10
600
500
400
300
200
100
Collector to emitter voltage V
– 0.1
0
0
0
Collector current I
– 0.3
–2
Ta=75˚C
I
–4
–1
h
C
FE
–25˚C
— V
25˚C
— I
–3
–6
CE
C
–10
–8
C
I
B
V
=–500 A
CE
( mA )
Ta=25˚C
–30
–10
=–5V
–450 A
–400 A
–350 A
–300 A
–250 A
–200 A
–150 A
–100 A
–50 A
CE
–100
–12
( V )
–120
–100
–80
–60
–40
–20
300
250
200
150
100
50
0
0
0
1
Base to emitter voltage V
Emitter current I
– 0.4
Ta=75˚C
3
I
C
f
– 0.8
T
— V
25˚C
— I
10
–25˚C
–1.2
BE
E
2SA1123
E
V
Ta=25˚C
30
CB
( mA )
V
–1.6
CE
=–10V
BE
=–5V
( V )
–2.0
100