2SA2059 Toshiba Semiconductor, 2SA2059 Datasheet - Page 3

• Manufacturer Part Number: 2SA2059
• Description: SILICON PNP EPITAXIAL TYPE
• Manufacturer: Toshiba Semiconductor

0.001
0.01
0.1
10
0.001
6
5
4
3
2
1
0
1
5
4
3
2
1
0
0
0
Common emitter
I C /I B
Single
nonrepetitive
pulse
Common emitter
V CE
Single nonrepetitive
pulse
30
Collector-emitter voltage V
0.4
2 V
Base-emitter voltage V
0.01
0.4
Collector current I
Ta
100
0.8
V
100°C
CE (sat)
I
I
C
C
Ta
– V
– V
1.2
0.1
0.8
80
100°C
CE
Common emitter
Ta
Single nonrepetitive pulse
BE
25
– I
25
C
25°C
C
1.6
BE
55
55
CE
(A)
1.2
1
(V)
I B
(V)
2.0
60
40
20
10
5 mA
2.4
1.6
10
3
10000
1000
0.01
100
100
0.1
10
10
0.001
0.001
1
1
Common emitter
V CE
Single
nonrepetitive
pulse
Common emitter
I C /I B
Single
nonrepetitive
pulse
30
25
2 V
0.01
0.01
Collector current I
Collector current I
25
55
V
BE (sat)
h
FE
Ta
55
0.1
0.1
– I
100°C
Ta
– I
C
C
C
C
100°C
(A)
(A)
1
1
2001-10-29
2SA2059
10
10