BFG31 Philips Semiconductors, BFG31 Datasheet - Page 2

• Manufacturer Part Number: BFG31
• Description: PNP 5 GHz wideband transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
DESCRIPTION
PNP planar epitaxial transistor
mounted in a plastic SOT223
envelope.
It is intended for wideband amplifier
applications.
NPN complement is the BFG97.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. T
1995 Sep 12
V
I
P
h
f
G
V
V
V
V
I
P
T
T
C
T
C
SYMBOL
SYMBOL
FE
stg
j
High output voltage capability
High gain bandwidth product
Good thermal stability
Gold metallization ensures
excellent reliability.
CEO
tot
o
CBO
CEO
EBO
tot
PNP 5 GHz wideband transistor
UM
s
is the temperature at the soldering point of the collector tab.
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power
gain
output voltage
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
PARAMETER
PARAMETER
PINNING
1
2
3
4
PIN
open emitter
open base
open collector
up to T
open base
up to T
I
T
I
f = 500 MHz; T
I
f = 800 MHz; T
I
R
C
C
C
C
amb
L
= 70 mA; V
= 70 mA; V
= 70 mA; V
= 100 mA; V
= 75 ; T
= 25 C
emitter
base
emitter
collector
s
s
= 135 C; note 1
= 135 C ; note 1
CONDITIONS
DESCRIPTION
amb
2
amb
amb
CE
CE
CE
CONDITIONS
CE
= 25 C
= 10 V;
= 10 V;
= 10 V;
= 25 C
= 25 C
= 10 V;
page
25
MIN.
Top view
5.0
12
600
Fig.1 SOT223.
65
TYP.
MIN.
1
Product specification
1
1
150
175
MAX.
MAX.
15
100
20
15
3
100
2
BFG31
4
MSB002 - 1
V
mA
W
GHz
dB
mV
V
V
V
mA
W
C
C
UNIT
UNIT
3