BFG31 Philips Semiconductors, BFG31 Datasheet - Page 3

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BFG31

Manufacturer Part Number
BFG31
Description
PNP 5 GHz wideband transistor
Manufacturer
Philips Semiconductors
Datasheet

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Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. T
CHARACTERISTICS
T
Notes
1. G
2. d
3. d
1995 Sep 12
R
V
V
V
I
h
C
C
C
f
G
V
V
SYMBOL
SYMBOL
j
CBO
T
FE
(BR)CBO
(BR)CEO
(BR)EBO
o
o
th j-s
= 25 C unless otherwise specified.
cb
eb
re
PNP 5 GHz wideband transistor
UM
V
V
V
measured at f
V
V
V
measured at f
im
im
s
p
q
r
p
q
r
UM
= V
= V
is the temperature at the soldering point of the collector tab.
= V
= V
= V
= V
= 60 dB; I
= 60 dB (DIN 45004B); I
is the maximum unilateral power gain, assuming S
o
o
o
o
o
o
at d
= at d
thermal resistance from junction to
soldering point
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector cut-off current
DC current gain
collector-base capacitance
emitter-base capacitance
feedback capacitance
transition frequency
maximum unilateral power gain; note 1
output voltage
output voltage
6 dB;f
6 dB; f
6 dB; f
6 dB; f
im
(p+q r)
im
(p+q r)
= 60 dB; f
C
r
r
q
q
= 860.25 MHz;
= 60 dB; f
= 70 mA; V
= 455.25 MHz;
= 858.25 MHz;
= 453.25 MHz;
= 848.25 MHz.
= 443.25 MHz.
PARAMETER
PARAMETER
p
= 850.25 MHz;
p
= 445.25 MHz;
CE
C
= 70 mA; V
= 10 V; R
L
CE
= 75 ; T
= 10 V; R
up to T
open emitter; I
open base; I
open collector; I
I
I
T
I
I
I
T
I
f = 500 MHz; T
I
f = 500 MHz; T
I
f = 800 MHz; T
note 2
note 3
E
C
C
C
C
C
C
C
amb
amb
= 0; V
= 70 mA; V
= 0; V
= 0; V
= 0; V
= 70 mA; V
= 70 mA; V
= 70 mA; V
amb
3
12
= 25 C
= 25 C
L
= 25 C;
is zero and
s
= 75 ; T
CB
CONDITIONS
= 135 C; note 1
CB
EB
CE
CONDITIONS
= 10 V
= 10 V; f = 1 MHz
= 10 V; f = 1 MHz;
= 10 V; f = 1 MHz;
C
= 10 mA
C
CE
CE
amb
CE
amb
CE
amb
E
= 10 mA
amb
= 0.1 mA
= 10 V;
= 10 V;
= 10 V;
= 10 V;
= 25 C
= 25 C
= 25 C
G
UM
= 25 C;
=
10
log
25
MIN.
------------------------------------------------------------ dB.
20
18
3
THERMAL RESISTANCE
1
s
11
1.8
5
1.6
5
16
12
600
550
TYP.
Product specification
2
s
40 K/W
21
1
2
MAX. UNIT
1
BFG31
s
22
2
V
V
V
pF
pF
pF
GHz
dB
dB
mV
mV
A

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