BFG505 Philips Semiconductors, BFG505 Datasheet - Page 3

• Manufacturer Part Number: BFG505
• Description: NPN 9 GHz wideband transistors
• Manufacturer: Philips Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. T
THERMAL CHARACTERISTICS
Note
1. T
1998 Oct 02
handbook, halfpage
V
V
V
I
P
T
T
R
SYMBOL
C
stg
j
CBO
CES
EBO
tot
th j-s
NPN 9 GHz wideband transistors
SYMBOL
(mW)
s
s
P tot
200
150
100
is the temperature at the soldering point of the collector pin.
is the temperature at the soldering point of the collector pin.
50
0
0
thermal resistance from junction to soldering point
Fig.2 Power derating curve.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature range
junction temperature
50
PARAMETER
100
PARAMETER
150
T s ( C)
MRA638-1
200
open emitter
R
open collector
T
s
BE
= 0
130 C; see Fig.2; note 1
3
CONDITIONS
note 1
CONDITIONS
BFG505; BFG505/X
65
MIN.
20
15
2.5
18
150
150
175
Product specification
VALUE
MAX.
290
V
V
V
mA
mW
C
C
UNIT
UNIT
K/W