BFG505 Philips Semiconductors, BFG505 Datasheet - Page 4

• Manufacturer Part Number: BFG505
• Description: NPN 9 GHz wideband transistors
• Manufacturer: Philips Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
Notes
1. G
2. V
1998 Oct 02
I
h
C
C
C
f
G
F
P
ITO
SYMBOL
j
CBO
T
S
FE
L1
= 25 C unless otherwise specified.
e
c
re
NPN 9 GHz wideband transistors
UM
21
f
measured at 2f
p
CE
UM
2
= 900 MHz; f
= 6 V; I
is the maximum unilateral power gain, assuming S
collector cut-off current
DC current gain
emitter capacitance
collector capacitance
feedback capacitance
transition frequency
maximum unilateral
power gain; note 1
insertion power gain
noise figure
output power at 1 dB gain
compression
third order intercept point
C
= 5 mA; R
q
p
PARAMETER
= 902 MHz;
f
q
= 898 MHz and 2f
L
= 50 ; T
amb
V
I
I
V
I
I
see Fig.5
I
T
I
T
I
T
T
T
T
I
T
note 2
C
C
C
C
C
c
c
C
= 25 C;
q
amb
amb
amb
s
amb
s
amb
s
amb
amb
CB
CB
= 5 mA; V
= 5 mA; V
= 5 mA; V
= i
= 0; V
= 5 mA; V
= 5 mA; V
= 5 mA; V
=
=
=
f
= 6 V; I
= 6 V; I
c
p
= 25 C; f = 900 MHz
= 25 C; f = 2 GHz
= 25 C; f = 900 MHz
= 25 C; f = 900 MHz
= 25 C; f = 900 MHz
= 25 C; f = 2 GHz
= 25 C; f = 900 MHz
opt
opt
opt
= 0 V
= 904 MHz.
CB
; I
; I
; I
C
C
C
= 6 V; f = 1 MHz; see Fig.4
E
E
EB
CE
CE
= 1.25 mA; V
= 5 mA; V
= 1.25 mA; V
CONDITIONS
CE
CE
CE
CE
= 0
= i
= 0.5 V; f = 1 MHz
= 6 V;
= 6 V;
= 6 V; see Fig.3
= 6 V; f = 1 GHz;
= 6 V;
= 6 V; R
e
4
= 0; f = 1 MHz
12
is zero and
CE
L
= 6 V;
= 50 ;
CE
CE
= 6 V;
= 6 V;
G
UM
=
10
60
16
MIN.
log
BFG505; BFG505/X
-------------------------------------------------------------- dB.
1
–
120
0.4
0.3
0.2
9
20
13
17
1.2
1.6
1.9
4
10
TYP.
S
11
Product specification
S
2
21
1
50
250
1.7
2.1
2
MAX.
–
S
22
2
nA
pF
pF
pF
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
UNIT