BFG540W Philips Semiconductors, BFG540W Datasheet - Page 6

• Manufacturer Part Number: BFG540W
• Description: NPN 9 GHz wideband transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
1997 Dec 04
handbook, halfpage
handbook, halfpage
NPN 9 GHz wideband transistor
f = 900 MHz; V
I
C
gain
(dB)
gain
(dB)
= 10 mA; V
Fig.7
30
20
10
50
40
30
20
10
0
0
Fig.9
10
0
MSG
G UM
CE
Gain as a function of collector current;
typical values.
MSG
CE
= 8 V.
= 8 V.
Gain as a function of frequency;
typical values.
10
10
2
20
30
10
3
f (MHz)
40
I
G max
G UM
C
G max
MLC045
MLC047
(mA)
10
50
4
6
handbook, halfpage
handbook, halfpage
f = 2 GHz; V
I
C
gain
(dB)
gain
(dB)
= 40 mA; V
Fig.8
50
30
20
10
40
30
20
10
0
0
Fig.10 Gain as a function of frequency;
10
0
CE
BFG540W/X; BFG540W/XR
G UM
CE
MSG
Gain as a function of collector current;
typical values.
= 8 V.
= 8 V.
typical values.
10
10
2
20
30
10
3
Product specification
BFG540W
f (MHz)
40
I
G max
G UM
C
G max
MLC046
MLC048
(mA)
10
50
4