BFG540W Philips Semiconductors, BFG540W Datasheet - Page 7

• Manufacturer Part Number: BFG540W
• Description: NPN 9 GHz wideband transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
1997 Dec 04
handbook, halfpage
handbook, halfpage
NPN 9 GHz wideband transistor
V
R
V
o
L
CE
= 500 mV; f
(dB)
(dB)
= 75 .
d im
Fig.11 Intermodulation distortion as a function
= 8 V.
Fig.13 Minimum noise figure as a function of
F
20
30
40
50
60
70
4
3
2
0
10
1
1
f = 2000 MHz
of collector current; typical values.
1000 MHz
(p + q
collector current; typical values.
900 MHz
500 MHz
20
r)
= 793.25 MHz; V
30
10
40
CE
= 8 V; T
I
C
(mA)
50
amb
I C (mA)
MEA973
= 25 C;
MLC049
10
60
2
7
handbook, halfpage
handbook, halfpage
V
Fig.12 Second order intermodulation distortion as a
V
o
CE
Fig.14 Associated available gain as a function of
F min
= 275 mV; f
(dB)
(dB)
d 2
= 8 V.
20
30
40
50
60
70
5
4
3
2
1
0
10
1
function of collector current; typical values.
collector current; typical values.
BFG540W/X; BFG540W/XR
2000 MHz
1000 MHz
(p + q)
900 MHz
500 MHz
20
= 810 MHz; V
30
CE
10
G ass
F min
= 8 V; T
40
I C (mA)
amb
Product specification
f = 900 MHz
BFG540W
= 25 C; R
50
1000 MHz
2000 MHz
I C (mA)
MRA760
MEA972
L
60
10
= 75 .
20
15
10
0
5
2
G ass
(dB)
5