BFQ193 Siemens Semiconductor Group, BFQ193 Datasheet
BFQ193
Manufacturer Part Number
BFQ193
Description
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
Manufacturer
Siemens Semiconductor Group
Datasheet
1.BFQ193.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BFQ193 E6327
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
NPN Silicon RF Transistor
ESD: Electrostatic discharge sensitive device, observe handling precaution!
• For low noise, high-gain amplifiers up to 2GHz
• For linear broadband amplifiers
• f
Type
BFQ 193
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
Semiconductor Group
F = 1.3 dB at 900 MHz
S
T
= 7.5 GHz
93 °C
Marking Ordering Code
RCs
Q62702-F1312
1)
1
Symbol
V
V
V
I
I
P
T
T
T
R
C
B
j
A
stg
CEO
CBO
EBO
tot
thJS
Pin Configuration
1 = B
2 = C
- 65 ... + 150
- 65 ... + 150
Values
600
150
12
20
80
10
2
95
3 = E
Package
SOT-89
Dec-13-1996
BFQ 193
Unit
V
mA
mW
°C
K/W
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BFQ193 Summary of contents
Page 1
NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • 7.5 GHz 1 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type ...
Page 2
Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base cutoff current ...
Page 3
Electrical Characteristics at T Parameter AC Characteristics Transition frequency mA 500 MHz C CE Collector-base capacitance MHz CB Collector-emitter capacitance ...
Page 4
Total power dissipation P * Package mounted on epoxy 700 mW 600 P 550 tot 500 450 400 350 300 250 200 150 100 Permissible Pulse Load thJS K/W ...