BFQ193 Siemens Semiconductor Group, BFQ193 Datasheet - Page 2

• Manufacturer Part Number: BFQ193
• Description: NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
• Manufacturer: Siemens Semiconductor Group

Semiconductor Group
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
C
C
CE
CB
EB
= 1 mA, I
= 30 mA, V
= 1 V, I
= 20 V, V
= 10 V, I
B
C
E
= 0
= 0
CE
BE
= 0
= 0
= 8 V
A
= 25°C, unless otherwise specified.
2
Symbol
V
I
I
I
h
CES
CBO
EBO
FE
(BR)CEO
min.
-
-
-
12
50
Values
typ.
-
-
-
-
100
max.
-
100
100
1
200
Dec-13-1996
BFQ 193
Unit
V
µA
nA
µA
-