BFQ29 Siemens Semiconductor Group, BFQ29 Datasheet - Page 2

• Manufacturer Part Number: BFQ29
• Description: NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.)
• Manufacturer: Siemens Semiconductor Group

Electrical Characteristics
at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-base cutoff current
V
V
Emitter-base cutoff current
V
DC current gain
I
I
Collector-emitter saturation voltage
I
C
C
C
C
CB
CB
EB
= 1 mA, I
= 3 mA, V
= 10 mA, V
= 20 mA, I
A
= 10 V, I
= 20 V, I
= 3 V, I
= 25 ˚C, unless otherwise specified.
C
B
E
E
= 0
CE
B
= 0
CE
= 0
= 0
= 1 mA
= 6 V
= 6 V
Symbol
V
I
I
h
V
CB0
EB0
FE
(BR)CE0
CEsat
min.
15
–
–
–
50
50
–
Values
typ.
–
–
–
–
–
140
0.1
max.
–
0.05
10
100
250
–
0.4
BFQ 29P
BFQ 29P
Unit
V
–
V
A
A