BFQ29 Siemens Semiconductor Group, BFQ29 Datasheet - Page 3

• Manufacturer Part Number: BFQ29
• Description: NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.)
• Manufacturer: Siemens Semiconductor Group

Electrical Characteristics
at T
Parameter
AC Characteristics
Transition frequency
I
I
Collector-base capacitance
V
Collector-emitter capacitance
V
Input capacitance
V
Output capacitance
V
Noise figure
I
I
Power gain
I
Z
Transducer gain
I
Linear output voltage
two-tone intermodulation test
I
Third order intercept point
I
f
1
C
C
C
C
C
C
C
C
0
CB
CE
EB
CE
= 806 MHz, f
= 3 mA, V
= 20 mA, V
= 3 mA, V
= 4 mA, V
= 20 mA, V
= 20 mA, V
= 20 mA, V
= 20 mA, V
= 50 , Z
A
= 10 V, V
= 10 V, V
= 0.5 V, I
= 10 V, V
= 25 ˚C, unless otherwise specified.
L
CE
CE
CE
BE
BE
C
BE
= Z
CE
CE
CE
CE
CE
= i
= 6 V, f = 10 MHz, Z
= 6 V, f = 800 MHz, Z
2
= 6 V, f = 200 MHz
= v
= v
= v
= 6 V, f = 200 MHz
= 6 V, f = 800 MHz,
= 6 V, f = 1 GHz, Z
= 6 V, d
= 6 V, f = 800 MHz
= 810 MHz, Z
Lopt
c
be
be
= 0, f = 1 MHz
be
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
IM
= 60 dB,
S
= Z
L
0
S
= 50
S
= 50
= 75
= 50
Symbol
C
C
C
C
F
G
I S
V
IP
f
T
o1
cb
ce
ibo
obs
pe
3
21e
= V
I
2
o2
min.
–
3.6
–
–
–
–
–
–
–
–
–
–
Values
typ.
2.7
5
0.5
0.28
1.35
0.8
0.9
1.5
14
11
180
28
max.
–
–
0.65
–
–
–
1.2
–
–
–
–
–
BFQ 29P
BFQ 29P
Unit
GHz
pF
dB
mV
dBm