BFP136W Infineon Technologies AG, BFP136W Datasheet

no-image

BFP136W

Manufacturer Part Number
BFP136W
Description
NPN Silicon RF Transistor
Manufacturer
Infineon Technologies AG
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BFP136W
Manufacturer:
SIEMENS
Quantity:
3 549
Part Number:
BFP136W
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BFP136W E-6327
Manufacturer:
SIEMENS
Quantity:
2 138
Part Number:
BFP136WE-6327
Manufacturer:
SIEMENS
Quantity:
2 176
NPN Silicon RF Transistor



ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution!
Thermal Resistance
Type
BFP136W
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Junction temperature
Ambient temperature
Storage temperature
Junction - soldering point
Total power dissipation
T
1 T
2 For calculation of R
For power amplifier in DECT and PCN systems
f
Gold metalization for high reliability
S
T
S

= 5.5GHz
is measured on the collector lead at the soldering point to the pcb
60°C
1)
thJA
please refer to Application Note Thermal Resistance
Marking
PAs
2)
1 = E
Pin Configuration
2 = C
1
R
Symbol
V
V
V
V
I
I
P
T
T
T
C
B
j
A
stg
CEO
CES
CBO
EBO
tot
thJS
3 = E
4
4 = B
-65 ... 150
-65 ... 150
Value
3
1000

150
150
12
20
20
20
2
90
Package
SOT343
1
Jun-22-2001
BFP136W
VPS05605
2
Unit
K/W
V
mA
mW
°C

Related parts for BFP136W

BFP136W Summary of contents

Page 1

... Application Note Thermal Resistance thJA 4 Pin Configuration Symbol V CEO V CES V CBO V EBO tot stg R thJS 1 BFP136W VPS05605 Package SOT343 Value Unit 150 mA 20 1000 mW 150 °C -65 ... 150 -65 ... 150  K/W 90 Jun-22-2001 ...

Page 2

... Emitter-base cutoff current current gain mA 25°C, unless otherwise specified. A Symbol V (BR)CEO I CES I CBO I EBO BFP136W Values Unit min. typ. max 100 µ µA 50 100 200 - Jun-22-2001 ...

Page 3

... (k-(k - 25°C, unless otherwise specified. A Symbol Sopt Sopt L Lopt |S 21e = Sopt L Lopt 1 BFP136W Values min. typ. max 1.7 2 Jun-22-2001 Unit GHz pF dB dBm ...

Page 4

... 86.717 - IKR = 0.033605 0.22081  VJE = 0.71518 V XTF = 0.31338 - PTF = 0 deg MJC = 0.31461 - CJS = 0 fF XTB = 0.99886 - 4 BFP136W NF = 1.0653 - ISE = 46. 1.8047 - ISC = 0.0080864 fA IRB = 0.83992 0.01636  MJE = 0.36824 - VTF = 0.10174 V CJC = 2977.4 fF XCJC = 0.02899 - VJS = 0. 1.11 ...

Page 5

... S 120 °C 100 150 T S Permissible Pulse Load = thJS p P totmax BFP136W / totDC 0.005 0.01 0.02 0.05 1 0.1 0.2 0 Jun-22-2001 - ...

Page 6

... V = Parameter CE 7.0 GHz 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 Power Gain 1.8GHz V = Parameter 0.7V 140 mA 170 BFP136W = 100 120 , 10V 100 120 Jun-22-2001 0.7V 140 mA 170 ...

Page 7

... Parameter 900MHz CE 40 0.9GHz dBm 30 0.9GHz 25 1.8GHz Power Gain | 10V 0.7V -8 2.5 GHz 3.5 0 BFP136W =Z = 100 120 f(f) 21 Parameter I =80mA C 0.5 1.0 1.5 2.0 2.5 Jun-22-2001 =f 160 I C 10V ...

Related keywords