BFP183R Infineon Technologies AG, BFP183R Datasheet

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BFP183R

Manufacturer Part Number
BFP183R
Description
NPN Silicon RF Transistor
Manufacturer
Infineon Technologies AG
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BFP183R
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
NPN Silicon RF Transistor


ESD: Electrostatic discharge sensitive device, observe handling precaution!
Thermal Resistance
Type
BFP183R
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Junction temperature
Ambient temperature
Storage temperature
Junction - soldering point
Total power dissipation
T
1 T
2 For calculation of R
For low noise, high-gain broadband amplifiers at
f
S
collector currents from 2 mA to 28 mA
F = 1.2 dB at 900 MHz
T
S

= 8 GHz
is measured on the collector lead at the soldering point to the pcb
76 °C
1)
thJA
please refer to Application Note Thermal Resistance
Marking
RHs
2)
1 = E
Pin Configuration
2 = C
1
R
Symbol
V
V
V
V
I
I
P
T
T
T
C
B
j
A
stg
CEO
CES
CBO
EBO
tot
thJS
3 = E
4 = B
-65 ... 150
-65 ... 150
Value

250
150
12
20
20
65
295
2
5
Package
SOT143R
Aug-09-2001
BFP183R
Unit
K/W
V
mA
mW
°C

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BFP183R Summary of contents

Page 1

... Application Note Thermal Resistance thJA Pin Configuration Symbol V CEO V CES V CBO V EBO tot stg R thJS 1 BFP183R Package SOT143R Value Unit 250 mW 150 °C -65 ... 150 -65 ... 150  K/W 295 Aug-09-2001 ...

Page 2

... CB E Emitter-base cutoff current current gain mA 25°C, unless otherwise specified. A Symbol V (BR)CEO I CES I CBO I EBO BFP183R Values Unit min. typ. max 100 µ 100 µA 50 100 200 - Aug-09-2001 ...

Page 3

... (k-(k - 25°C, unless otherwise specified. A Symbol Sopt Sopt L Lopt Sopt L Lopt |S 21e = 1 BFP183R Values min. typ. max 0.35 0 Aug-09-2001 Unit GHz pF dB ...

Page 4

... 10.016 - IKR = 0.013483 2.5426  RE = 1.3435 VJE = 1.0792 V XTF = 0.36823 - PTF = 0 deg MJC = 0.3 - CJS = 0 fF XTB = 0.54852 - 4 BFP183R NF = 0.80799 - ISE = 16.818 0.99543 - ISC = 1.3559 fA IRB = 0.43801 0.20486  MJE = 0.45354 - VTF = 0.50905 V CJC = 460.11 fF XCJC = 0.053823 - VJS = 0. ...

Page 5

... S 120 °C 100 150 T S Permissible Pulse Load = thJS p P totmax BFP183R / totDC 0.005 0.01 0.02 0.05 1 0.1 0.2 0 Aug-09-2001 - ...

Page 6

... Parameter CE 10.0 GHz 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 Power Gain 1.8GHz V = Parameter CE 16 10V 0. BFP183R = f Aug-09-2001 10V 0. 10V 3V ...

Page 7

... Parameter 900MHz CE 28 0.9GHz dBm 24 0.9GHz 22 20 1.8GHz 18 16 1.8GHz Power Gain | 10V 1V 0. 2.5 GHz 3.5 0 BFP183R =Z = f(f) 21 Parameter I =15mA C 0.5 1.0 1.5 2.0 2.5 Aug-09-2001 =f 10V 1V 0 ...

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