BFP490 Siemens Semiconductor Group, BFP490 Datasheet - Page 2

• Manufacturer Part Number: BFP490
• Description: NPN Silicon RF Transistor (Q62702-F1721)
• Manufacturer: Siemens Semiconductor Group

Semiconductor Group
Electrical Characteristics at T
Parameter
DC characteristics
Collector-emitter breakdown voltage
I
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
AC characteristics
Transition frequency
I
I
Collector-base capacitance
V
Collector-emitter capacitance
V
Emitter-base capacitance
V
Noise figure
I
f = 1.8 GHz
Power gain
I
f = 1.8 GHz
Insertion power gain
I
Z
Third order intersept point
I
f = 1.8 GHz
1dB Compression point
I
Z
Semiconductor Group
C
C
C
C
C
C
C
C
C
S
S
CB
EB
CB
CE
EB
= 1 mA, I
= 200 mA, V
= 300 mA, V
= 300 mA, V
= 100 mA, V
= 200 mA, V
= 200 mA, V
= 300 mA, V
= 300 mA, V
= Z
= Z
= 1.5 V, I
= 0.5 V, f = 1 MHz
= 5 V, I
= 2 V, f = 1 MHz
= 2 V, f = 1 MHz
Sopt
L
= 50
, Z
B
E
L
2)
= Z
= 0
= 0
C
CE
CE
CE
CE
CE
CE
CE
CE
= 0
Lopt
= 3 V
= 3 V, f = 0.2 GHz
= 3 V, f = 0.5 GHz
= 2 V, Z
= 2 V, Z
= 2 V, f = 0.5 GHz,
= 3 V, Z
= 3 V, f = 1.8 GHz,
S
S
S
2) G ma = | S 21 / S 12 | (k-(k 2 -1) 1/2 )
= Z
= Z
= Z
Sopt
A
Sopt
Sopt
= 25°C, unless otherwise specified.
, Z
, Z
,
L
L
= Z
= Z
Lopt
Lopt
2
,
2
,
Symbol
V
I
I
h
f
C
C
C
F
G
| S
IP
P
T
CBO
EBO
FE
(BR)CEO
cb
ce
eb
-1dB
ma
21
3
|
2
min.
4.5
50
13
-
-
-
-
-
-
-
-
-
-
-
Values
17.5
10.5
26.5
typ.
3.7
6.3
3.3
8.5
90
15
35
5
9
-
-
max.
1800 nA
400
Sep-09-1998
4.7
-
-
-
-
-
-
-
-
-
-
-
BFP 490
1998-11-01
Unit
V
µA
-
GHz
pF
dB
dB
dBm