BFP490 Siemens Semiconductor Group, BFP490 Datasheet - Page 5

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BFP490

Manufacturer Part Number
BFP490
Description
NPN Silicon RF Transistor (Q62702-F1721)
Manufacturer
Siemens Semiconductor Group
Datasheet

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Semiconductor Group
For non-linear simulation:
Note:
The common emitter configuration shows the following advantages:
Please note, that the broadest lead is the emitter lead.
The AC characteristics are verified by random sampling.
Semiconductor Group
Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.
If you need simulation of thereverse characteristics, add the diode with the
Simulation of package is not necessary for frequenties < 100MHz.
This transistor is constructed in a common emitter configuration. This feature causes
Higher gain because of lower emitter inductance.
Power is dissipated via the grounded emitter leads, because the chip is mounted
an additional reverse biased diode between emitter and collector, which does not
effect normal operation.
on copper emitter leadframe.
C’-E’- diode data between collector and emitter.
For higher frequencies add the wiring of package equivalent circuit around the
non-linear transistor and diode model.
Transistor Schematic Diagram
B
E
E
EHA07307
5
5
C
Sep-09-1998
BFP 490
1998-11-01

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