BFP74F Infineon Technologies AG, BFP74F Datasheet

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BFP74F

Manufacturer Part Number
BFP74F
Description
NPN Silicon Germanium RF Transistor
Manufacturer
Infineon Technologies AG
Datasheet
NPN Silicon Germanium RF Transistor
• High gain ultra low noise RF transistor
• Provides outstanding performance for
• Ideal for CDMA and WLAN applications
• Outstanding noise figure F = 0.5 dB at 1.8 GHz
• High maximum stable gain
• Gold metallization for extra high reliability
• 150 GHz f
ESD ( E lectro s tatic d ischarge) sensitive device, observe handling precaution!
Type
BFP740F
Maximum Ratings
Parameter
Collector-emitter voltage
T
T
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
1 T
A
A
S
a wide range of wireless applications
up to 10 GHz and more
Outstanding noise figure F = 0.75 dB at 6 GHz
G
S is measured on the collector lead at the soldering point to the pcb
> 0°C
≤ 0°C
≤ 90°C
ms
= 27.5 dB at 1.8 GHz
T
-Silicon Germanium technology
Marking
R7s
1)
1=B
2=E
Pin Configuration
3=C
1
Symbol
V
V
V
V
I
I
P
T
T
T
C
B
CEO
CES
CBO
EBO
tot
j
A
stg
4=E
-
Direction of Unreeling
-65 ... 150
-65 ... 150
-
Value
160
150
4
3.5
1.2
13
13
30
Top View
4
3
3
4
1
XYs
www.DataSheet4U.com
Package
TSFP-4
3
2
2005-11-08
1
BFP740F
2
Unit
V
mA
mW
°C

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BFP74F Summary of contents

Page 1

NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range of wireless applications GHz and more • Ideal for CDMA and WLAN applications • Outstanding noise ...

Page 2

Thermal Resistance Parameter 1) Junction - soldering point Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA GHz C CE Collector-base capacitance MHz ...

Page 4

... VJC = 180 m MJS = 910 m XTI = All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil- und Satellitentechnik (IMST) Package Equivalent Circuit: CBS RBS CBCC BFP740F_Chip B B LBB LBC CBEC LEC CBEI CBEO For examples and ready to use parameters ...

Page 5

Total power dissipation P tot 180 mW 140 120 100 105 120 ° Permissible Pulse Load = ƒ totmax totDC ...

Page 6

Third order Intercept Point Ω ) (Output parameter 900 MHz 1.00V ...

Page 7

V Power gain parameter in GHz 0.5 1 1 [V] ...

Page 8

Source impedance for min. noise figure vs. frequency 1.5 0.5 0.4 0 8mA c 0.2 4GHz 3GHz 5GHz 0.1 2.4GHz 1.8GHz 6GHz 0.2 0.4 ...

Page 9

Package Outline Foot Print Marking Layout Manufacturer Pin 1 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package TSFP-4 1.4 ±0.05 0.55 ±0.04 0.2 ±0. 0.2 ...

Page 10

... Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München © Infineon Technologies AG 2005. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein ...

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