MX043 Microsemi, MX043 Datasheet - Page 2

• Manufacturer Part Number: MX043
• Description: RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET
• Manufacturer: Microsemi

Mechanical Outline
ShelFit
Electrical Parameters @ 25 C (unless otherwise specified)
DESCRIPTION
Drain-to-Source Breakdown Voltage
(Gate Shorted to Source)
Temperature Coefficient of the Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Current
Drain-to-Source Leakage Current (Zero Gate
Voltage Drain Current)
Static Drain-to-Source On-State Resistance (1)
Forward Transconductance (1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Body Diode Forward Voltage (1)
Reverse Recovery Time (Body Diode)
MX043G
™
MX043J
SYMBOL
BV
BV
R
V
Q
T
C
t
I
I
C
C
V
DS(on)
Q
Q
DSS
GSS
DSS
d(off)
GS(th)
g
d(on)
g(on)
t
oss
t
t
iss
rss
SD
rr
DSS
fs
r
f
gs
gd
/ T
J
V
V
V
V
V
V
V
I
I
V
F
F
GS
DS
GS
DS
GS
DS
GS
= 10 A, -di/dt = 100 A/ s,
= I
GS
= 12V, I
V
S
= 0 V, I
= V
=
=0.8 BV
= 12 V, V
= 0 V
, V
GS
10 V; I
V
GS
= 0 V, V
20 V
GS
I
GS
D
, I
I
= 44 A, R
= 0 V
D
D
D
CONDITIONS
D
= 12 V, V
= 25A
= 28A
D
DC
DSS
= 1 mA
= 1 mA,
DS
= 50 A
, V
DS
= 100V, I
DS
= 25 V, f = 1 MHz
= 0
G
DS
= 2.35
= 100 V,
D
= 44 A
T
T
T
T
T
T
T
J
J
J
J
T
J
J
J
T
T
= 125 C
= 125 C
= 125 C
J
= -55 C
= 125 C
J
= 25 C
= 25 C
J
= 25 C
= 25 C
=25 C
MIN
200
1.5
0.5
0.6
26
-
TYP.
0.043
4400
900
280
tbd
160
32
30
83
-
-
MAX
0.050
0.093
250
100
180
560
4.0
5.0
1.8
100
200
25
40
95
25
38
93
-
UNIT
V/ C
nA
nC
pF
ns
ns
V
V
V
V
S
V
A
A