MX043 Microsemi, MX043 Datasheet - Page 3

• Manufacturer Part Number: MX043
• Description: RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET
• Manufacturer: Microsemi

a.
b.
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f.
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h.
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l.
m.
Total Dose Irradiation i.a.w. method 1019 of MIL-STD-750, dose= 100 kRAD, Drain shorted to Source, VGS= 10V
Total Dose Irradiation i.a.w. method 1019 of MIL-STD-750, dose= 100 kRAD, Gate shorted to Source, VDS= 160V
Evaluation criteria: no degradation of the DC electrical parameters exceeding the data sheet limits allowed after total dose irradiation.
100% die probe at T
100% Visual Inspection i.a.w. method 2072 of MIL-STD-750
Wafer Lot Evaluation Testing (WLAT) i.a.w. method 5001 of MIL-STD-750, including SEM
Unclamped Inductive Switching (I
Gate Stress Test for 250 s at VGS= 30 Vdc.
Safe Operating Area i.a.w. method 3474 of MIL-STD-750 at VDS= 160 V, ID= 2.8 A for 10 ms
High Temperature Gate Bias i.a.w. method 1042 cond.B of MIL-STD-750: 48 hrs at T
V
High Temperature Reverse Bias i.a.w. method 1042 cond.A of MIL-STD-750: 240 hrs at T
and V
Final DC Electrical Testing at T
Temperature Cycling i.a.w. method 1051 of MIL-STD-750, 100 cycles, -55 C to +150 C
Group A Electrical Testing including dynamic parameters
Steady State Operational Life Bias i.a.w. method 1042 cond.A of MIL-STD-750: 1000 hrs at T
and V
Final DC Electrical Testing at T
Die Attach Evaluation i.a.w. method 2017 of MIL-STD-750
Bond Strength Evaluation i.a.w. 2037 of MIL-STD-750
GS
= 16 V
DS
DS
= 160 V
= 160 V
ambient
= 25 C for BVDSS, VGS
ambient
ambient
AS
100% KND (Known-Good-Die) SCREENING
) i.a.w. method 3470 of MIL-STD-750 at VGS
= 25 C, 125 C and -55 C
= 25 C, 125 C and -55 C
DIE ELEMENT EVALUATION
RADIATION EVALUATION
th
, IDSS, IGSS, VSD, RDS
on
peak
= 15 V, L= 100 H, I
ambient
ambient
= 150 C, Drain shorted to Source and
ambient
= 150 C, Gate shorted to Source
= 150 C, Gate shorted to Source
AS
= 132 A