BLT71 Philips Semiconductors, BLT71 Datasheet - Page 2

• Manufacturer Part Number: BLT71
• Description: UHF power transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN silicon planar epitaxial power transistor encapsulated
in a SOT96-1 (SO8) plastic SMD package.
QUICK REFERENCE DATA
RF performance at T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
1997 Oct 14
V
V
V
I
P
T
T
SYMBOL
C
stg
j
High efficiency
Very high gain
Internal pre-matched input
Low supply voltage.
Hand-held radio equipment in common emitter class-AB
operation for the 900 MHz communication band.
CBO
CEO
EBO
tot
UHF power transistor
MODE OF OPERATION
s
is the temperature at the soldering point of the collector pin.
CW, class-AB
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
s
PARAMETER
60 C in a common emitter test circuit.
(MHz)
900
f
open emitter
open base
open collector
T
s
= 60 C; V
V
(V)
4.8
CE
CONDITIONS
2
PINNING - SOT96-1
handbook, halfpage
CE
2, 4, 5, 7
PIN
1, 8
3, 6
6.5 V; note 1
(W)
1.2
P
L
Fig.1 Simplified outline.
SYMBOL
b
e
c
1
8
Top view
65
MIN.
typ. 13
(dB)
G
11
base
emitter
collector
p
MBK187
5
4
Product specification
16
8
2.5
500
2.9
+150
175
DESCRIPTION
MAX.
BLT71/8
typ. 63
V
V
V
mA
W
(%)
C
C
55
C
UNIT