BLT71 Philips Semiconductors, BLT71 Datasheet - Page 3

• Manufacturer Part Number: BLT71
• Description: UHF power transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. T
CHARACTERISTICS
T
1997 Oct 14
R
V
V
V
I
h
C
C
handbook, halfpage
SYMBOL
SYMBOL
j
CES
FE
(BR)CBO
(BR)CEO
(BR)EBO
th j-s
= 25 C unless otherwise specified.
c
re
UHF power transistor
T
Fig.2
s
s
= 115 C.
10
(A)
I C
is the temperature at the soldering point of the collector pin.
10
1
1
1
DC SOAR.
thermal resistance from junction to
soldering point
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector leakage current
DC current gain
collector capacitance
feedback capacitance
1
PARAMETER
PARAMETER
(1)
10
V CE (V)
MBK263
10
2
P
open emitter; I
open base; I
open collector; I
V
V
V
V
dis
CE
CE
CB
CE
= 2.9 W; T
= 8 V; V
= 5 V; I
= 4.8 V; I
= 4.8 V; I
3
handbook, halfpage
CONDITIONS
CONDITIONS
C
C
BE
= 100 mA
E
C
V
Measured under pulse conditions: t
Fig.3
= 10 mA
C
CE
s
= i
= 0
= 0; f = 1 MHz
h FE
E
= 60 C; note 1
= 0.5 mA
150
100
= 4.8 V.
50
= 0.1 mA
e
0
= 0; f = 1 MHz
0
DC current gain as a function of collector
current; typical values.
200
16
8
2.5
25
400
p
MIN.
MAX.
300 s;
40
Product specification
600
0.1
7
5
MAX.
I C (mA)
0.001.
BLT71/8
MLD131
800
UNIT
K/W
V
V
V
mA
pF
pF
UNIT