PBSS306NX Philips Semiconductors, PBSS306NX Datasheet - Page 5

• Manufacturer Part Number: PBSS306NX
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
PBSS306NX_1
Product data sheet
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
1
1
2
1
10
2
1
10
FR4 PCB, mounting pad for collector 6 cm
Ceramic PCB, Al
5
5
0.50
0.20
0.10
0.05
0.02
0.01
0.01
0.50
0.20
0.10
0.05
0.02
= 1
0
= 1
0
0.75
0.33
0.75
0.33
10
10
2
4
4
O
3
, standard footprint
10
10
3
3
2
10
10
Rev. 01 — 21 August 2006
2
2
10
10
1
1
100 V, 4.5 A NPN low V
1
1
10
10
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
PBSS306NX
CEsat
10
10
2
2
(BISS) transistor
t
t
p
p
006aaa558
006aaa559
(s)
(s)
10
10
3
3
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