PBSS4160V Philips Semiconductors, PBSS4160V Datasheet - Page 4

• Manufacturer Part Number: PBSS4160V
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
6. Thermal characteristics
9397 750 14359
Product data sheet
Fig 2. Transient thermal impedance as a function of pulse time; typical values
(10)
(K/W)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
Z
10
th
10
10
10
1
3
2
1
10
Mounted on FR4 PCB; standard footprint.
= 1
= 0.75
= 0.5
= 0.33
= 0.2
= 0.1
= 0.05
= 0.02
= 0.01
= 0
5
10
4
Table 6:
[1]
[2]
Symbol
R
(10)
(1)
(2)
(3)
(4)
(5)
(6)
(8)
(9)
(7)
th(j-a)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, 1 cm
10
Thermal characteristics
3
Parameter
thermal resistance from junction
to ambient
10
Rev. 02 — 31 January 2005
2
10
1
1
Conditions
in free air
60 V, 1 A NPN low V
10
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
2
collector mounting pad.
PBSS4160V
[1]
[2]
CEsat
10
Min Typ Max Unit
-
-
2
(BISS) transistor
t
p
001aaa715
-
-
(s)
10
415 K/W
250 K/W
3
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