PBSS4160V Philips Semiconductors, PBSS4160V Datasheet - Page 8

• Manufacturer Part Number: PBSS4160V
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
9397 750 14359
Product data sheet
Fig 9. Collector current as a function of
(10) I
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
(7) I
(8) I
(9) I
(A)
1.6
1.2
0.8
0.4
I
C
2
0
T
collector-emitter voltage; typical values
B
B
B
B
B
B
B
B
B
B
0
amb
= 60 mA
= 54 mA
= 48 mA
= 42 mA
= 36 mA
= 30 mA
= 24 mA
= 18 mA
= 12 mA
= 6 mA
= 25 C
1
(6)
(5)
2
(4)
(3)
3
(2)
(10)
(1)
(7)
(8)
(9)
4
V
CE
mle131
(V)
Rev. 02 — 31 January 2005
5
Fig 10. Equivalent on-resistance as a function of
R
(1) T
(2) T
(3) T
CEsat
( )
10
10
10
10
10
1
3
2
1
I
collector current; typical values
C
amb
amb
amb
/I
1
B
60 V, 1 A NPN low V
= 20
= 100 C
= 25 C
= 55 C
1
10
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
(2)
10
PBSS4160V
(1)
(3)
2
CEsat
10
(BISS) transistor
3
I
C
mle132
(mA)
10
4
8 of 14