PBSS4230T Philips Semiconductors, PBSS4230T Datasheet - Page 2

• Manufacturer Part Number: PBSS4230T
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN BISS transistor in a SOT23 plastic package providing
ultra low V
PNP complement: PBSS5230T.
MARKING
Note
1. * = p: made in Hong Kong.
ORDERING INFORMATION
2003 Sep 29
PBSS4230T
PBSS4230T
Low collector-emitter saturation voltage V
High collector current capability I
High efficiency leading to less heat generation
Reduced printed-circuit board requirements
Cost effective alternative to MOSFETs in specific
applications.
Power management
– DC/DC conversion
– Supply line switching
– Battery charger
– LCD backlighting.
Peripheral driver
– Driver in low supply voltage applications (e.g. lamps
– Inductive load drivers (e.g. relays, buzzers and
30 V, 2 A
NPN low V
* = t: made in Malaysia.
* = W: made in China.
and LEDs)
motors).
TYPE NUMBER
TYPE NUMBER
CEsat
and R
CEsat
CEsat
parameters.
(BISS) transistor
MARKING CODE
NAME
C
and I
*3D
CM
CEsat
plastic surface mounted package; 3 leads
(1)
2
QUICK REFERENCE DATA
PINNING
handbook, halfpage
V
I
I
R
SYMBOL
C
CM
CEO
CEsat
PIN
DESCRIPTION
1
2
3
Fig.1 Simplified outline (SOT23) and symbol.
Top view
PACKAGE
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
base
emitter
collector
1
PARAMETER
3
DESCRIPTION
2
MAM255
Product specification
PBSS4230T
1
30
2
3
200
MAX.
VERSION
SOT23
3
2
V
A
A
m
UNIT