PBSS4230T Philips Semiconductors, PBSS4230T Datasheet - Page 3

• Manufacturer Part Number: PBSS4230T
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2003 Sep 29
V
V
V
I
I
I
P
T
T
T
R
SYMBOL
SYMBOL
C
CM
BM
stg
j
amb
CBO
CEO
EBO
tot
th j-a
30 V, 2 A
NPN low V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
CEsat
PARAMETER
(BISS) transistor
PARAMETER
open emitter
open base
open collector
T
T
amb
amb
in free air; note 1
in free air; note 2
3
25 C; note 1
25 C; note 2
CONDITIONS
CONDITIONS
65
65
MIN.
VALUE
417
260
40
30
5
2
3
300
300
480
+150
150
+150
PBSS4230T
Product specification
MAX.
UNIT
K/W
K/W
V
V
V
A
A
mA
mW
mW
C
C
C
UNIT
2
2
.
.