PBSS5520X NXP Semiconductors, PBSS5520X Datasheet - Page 8

• Manufacturer Part Number: PBSS5520X
• Description: 20V 5A PNP low VCEsat (BISS) transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
2004 Nov 08
20 V, 5 A
PNP low V
(1) I
(2) I
(3) I
(4) I
Fig.6
V
(1) T
(2) T
(3) T
Fig.8
h
CE
(A)
1000
I
FE
0.25
0.20
0.15
0.10
0.05
C
800
600
400
200
= 2 V.
B
B
B
B
0
0
amb
amb
amb
10
= 64 mA.
= 57.6 mA.
= 51.2 mA.
= 44.8 mA.
0
= 100 C.
= 25 C.
= 55 C.
1
Collector current as a function of
collector-emitter voltage; typical values.
DC current gain as a function of collector
current; typical values.
0.4
1
(1)
(2)
(3)
CEsat
(5) I
(6) I
(7) I
B
B
B
0.8
10
= 38.4 mA.
= 25.6 mA.
= 32 mA.
(1)
(BISS) transistor
(2)
10
1.2
(3)
2
(8) I
(9) I
(10) I
(4)
10
1.6
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(10)
B
B
B
V
3
(5)
I
(6)
(7)
(8)
(9)
C
CE
= 19.2 mA.
= 12.8 mA.
= 6.4 mA.
(mA)
(V)
10
2.0
4
8
R
V
(1) T
(2) T
(3) T
Fig.7
I
(1) T
(2) T
(3) T
Fig.9
(mV)
C
V
CEsat
CE
( )
/I
1200
10
10
BE
B
800
400
10
= 2 V.
10
= 20.
0
1
amb
amb
amb
2
1
2
amb
amb
amb
10
10
= 55 C.
= 25 C.
= 100 C.
= 100 C.
= 25 C.
= 55 C.
1
Base-emitter voltage as a function of
collector current; typical values.
1
Equivalent on-resistance as a function of
collector current; typical values.
1
1
(1)
(2)
(3)
10
10
10
10
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2
2
PBSS5520X
Product specification
10
10
(1)
(2)
(3)
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001aaa775
3
3
I
I
C
C
(mA)
(mA)
10
10
4
4