PBSS8110Z Philips Semiconductors, PBSS8110Z Datasheet - Page 5

• Manufacturer Part Number: PBSS8110Z
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
7. Characteristics
Table 7:
T
[1]
9397 750 12568
Product data sheet
Symbol
I
I
I
h
V
R
V
V
f
C
CBO
CES
EBO
T
j
FE
CEsat
BEsat
BEon
CEsat
c
= 25 C; unless otherwise specified.
Pulse test t
Characteristics
Parameter
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
equivalent
on-resistance
base-emitter
saturation voltage
base-emitter turn-on
voltage
transition frequency
collector capacitance
p
300 s;
0.02.
Conditions
V
V
T
V
V
V
V
V
V
I
I
I
I
I
V
V
f = 100 MHz
V
f = 1 MHz
C
C
C
C
C
j
CB
CB
CE
EB
CE
CE
CE
CE
CE
CE
CB
= 150 C
= 100 mA; I
= 500 mA; I
= 1 A; I
= 1 A; I
= 1 A; I
= 4 V; I
= 80 V; I
= 80 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
80 V; V
10 V; I
B
B
B
C
= 100 mA
= 100 mA
= 100 mA
C
BE
E
E
C
C
C
C
C
E
= 0 A
= 1 A
Rev. 01 — 26 April 2004
B
B
= 0 A
= 0 A;
= I
= 1 mA
= 250 mA
= 0.5 A
= 1 A
= 50 mA;
= 0 V
= 10 mA
= 50 mA
e
= 0 A;
[1]
[1]
[1]
100 V, 1 A NPN low V
Min
-
-
-
-
150
150
100
80
-
-
-
-
-
-
100
-
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Typ
-
-
-
-
-
-
-
-
-
-
-
160
-
-
-
-
PBSS8110Z
CEsat
Max
100
50
100
100
-
500
-
-
40
120
200
200
1.05
0.9
-
7.5
(BISS) transistor
Unit
nA
nA
nA
mV
mV
mV
m
V
V
MHz
pF
A
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