PBSS9110Y Philips Semiconductors, PBSS9110Y Datasheet - Page 8

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PBSS9110Y

Manufacturer Part Number
PBSS9110Y
Description
PNP low VCEsat (BISS) transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
9397 750 12844
Product data sheet
Fig 8. Base-emitter saturation voltage as a function of
Fig 10. Equivalent on-resistance as a function of
RCEsat
V
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
BEsat
(V)
( )
10
10
10
10
10
10
1
1
1
3
2
1
I
collector current; typical values.
I
collector current; typical values.
10
10
C
C
amb
amb
amb
amb
amb
amb
/I
/I
B
B
1
1
= 10.
= 10.
= 55 C.
= 25 C.
= 100 C.
= 55 C.
= 25 C.
= 100 C.
1
1
(1)
(2)
(3)
10
10
10
10
(1)
(2)
(3)
2
2
10
10
001aaa381
001aaa382
3
I
3
I
C
C
(mA)
(mA)
10
10
Rev. 01 — 9 June 2004
4
4
Fig 9. Base-emitter saturation voltage as a function of
Fig 11. Equivalent on-resistance as a function of
RCEsat
V
(1) I
(2) I
BEsat
( )
(V)
10
10
10
10
10
10
1
1
1
3
2
1
10
I
T
collector current; typical values.
10
T
collector current; typical values.
C
C
C
amb
amb
/I
/I
/I
100 V, 1 A PNP low V
B
B
B
1
1
= 20.
= 50.
= 20.
= 25 C.
= 25 C.
1
1
10
10
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
(1)
(2)
PBSS9110Y
10
10
2
2
CEsat
10
10
(BISS) transistor
001aaa379
001aaa383
3
I
3
I
C
C
(mA)
(mA)
10
10
4
4
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