VEC2811 Sanyo Semicon Device, VEC2811 Datasheet
VEC2811
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VEC2811 Summary of contents
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... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN VEC2811 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications ...
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... Reverse Recovery Time Package Dimensions unit : mm 7012-004 0 0.65 2.9 VEC2811 Symbol Conditions V (BR)DSS I D =--1mA =0V I DSS V DS =--30V =0V I GSS 16V = (off =--10V -1mA yfs V DS =--10V -1. (on =--1.5A -10V R DS (on =--0 ...
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... --1.5A 140 120 100 --2 --4 Gate-to-Source Voltage VEC2811 t rr Test Circuit [SBD --15V Duty 10 --1. = OUT VEC2811 [MOSFET] --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 IT07767 [MOSFET] Ta=25 C --6 --8 --10 --12 IT07769 50 100 -- ...
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... --10V --3A --9 --8 --7 --6 --5 --4 --3 --2 -- Total Gate Charge 1.0 0.9 0.8 0.6 0.4 0 Ambient Temperature VEC2811 [MOSFET 10V --1.0 IT07771 [MOSFET --1.0 IT07773 [MOSFET IT07775 [MOSFET] 80 100 120 ...
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... Average Output Current FSM -- t 7 Current waveform : 50Hz sine wave 0. Time VEC2811 0.25 0.30 0.35 0.40 0.45 0.50 IT08568 (2) (4) (3) (1) 1.5 2.0 2.5 IT08571 [SBD 20ms 1 0.1 ...
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... Note on usage : Since the VEC2811 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ ...