VEC2812 Sanyo Semicon Device, VEC2812 Datasheet - Page 2

• Manufacturer Part Number: VEC2812
• Description: N-Channel Silicon MOSFET / Schottky Barrier Diode
• Manufacturer: Sanyo Semicon Device

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Electrical Characteristics at Ta=25 C
Package Dimensions
unit : mm (typ)
7012-004
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
8
1
Parameter
7
2
2.9
6 5
0.65
3
4
0.3
1 : Anode
2 : No Contact
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Cathode
8 : Cathode
SANYO : VEC8
0.15
V (BR)DSS
R DS (on)1
R DS (on)2
R DS (on)3
V GS (off)
Symbol
t d (on)
t d (off)
I DSS
I GSS
Coss
Crss
V SD
Ciss
Qgs
Qgd
V F 1
V F 2
yfs
Qg
V R
I R
t rr
t r
C
t f
I D =1mA, V GS =0V
V DS =20V, V GS =0V
V GSS = 8V, V DS =0V
V DS =10V, I D =1mA
V DS =10V, I D =1A
I D =1A, V GS =4V
I D =0.5A, V GS =2.5V
I D =0.1A, V GS =1.8V
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
V DS =10V, V GS =10V, I D =1.5A
V DS =10V, V GS =10V, I D =1.5A
V DS =10V, V GS =10V, I D =1.5A
I S =1.5A, V GS =0V
I R =500 A
I F =500mA
I F =1A
V R =15V
V R =10V, f=1MHz
I F =I R =100mA, See specified Test Circuit.
VEC2812
Electrical Connection
Conditions
1
8
7
2
6
3
5
4
min
0.4
1.7
20
30
Ratings
typ
1 : Anode
2 : No Contact
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Cathode
8 : Cathode
Top view
0.35
160
220
310
100
2.8
5.5
4.5
0.4
0.4
0.9
0.4
22
15
18
17
27
8
max
0.39
0.45
210
290
435
360
1.3
1.2
No. A0392-2/6
10
10
1
Unit
m
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
pF
ns
V
V
S
V
V
V
V
A
A
A
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